Symmetry breaking and spin–orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers

Spins confined to point defects in atomically thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single-photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulfur vacancies in molybdenum disulfide (MoS2)...

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Main Authors: Aliyar, Thasneem, Ma, Hongyang, Krishnan, Radha, Singh, Gagandeep, Chong, Bi Qi, Wang, Yitao, Verzhbitskiy, Ivan, Wong, Calvin Pei Yu, Goh, Johnson Kuan Eng, Shen, Zexiang, Koh, Teck Seng, Rahman, Rajib, Weber, Bent
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2024
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Online Access:https://hdl.handle.net/10356/174707
http://arxiv.org/abs/2402.01193v2
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1747072024-04-08T15:35:23Z Symmetry breaking and spin–orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers Aliyar, Thasneem Ma, Hongyang Krishnan, Radha Singh, Gagandeep Chong, Bi Qi Wang, Yitao Verzhbitskiy, Ivan Wong, Calvin Pei Yu Goh, Johnson Kuan Eng Shen, Zexiang Koh, Teck Seng Rahman, Rajib Weber, Bent School of Physical and Mathematical Sciences Physics Coulomb blockade Scanning tunneling microsopy Spins confined to point defects in atomically thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single-photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulfur vacancies in molybdenum disulfide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. Spectroscopic mapping of defect wave functions reveals an interplay of local symmetry breaking by a charge-state-dependent Jahn-Teller lattice distortion that, when combined with strong (≃100 meV) spin-orbit coupling, leads to a locking of an unpaired spin-1/2 magnetic moment to the lattice at low temperature, susceptible to lattice strain. Our results provide new insights into the spin and electronic structure of vacancy-induced in-gap states toward their application as electrically and optically addressable quantum systems. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) National Research Foundation (NRF) Submitted/Accepted version This research is supported by the National Research Foundation (NRF) Singapore, under the Competitive Research Programme “Towards On-Chip Topological Quantum Devices” (NRF-CRP21-2018-0001), with further support from the Singapore Ministry of Education (MOE) Academic Research Fund Tier 3 grant (MOE2018-T3-1-002) “Geometrical Quantum Materials”. I.V., C.P.Y.W. and K.E.J.G. acknowledge the support from the Agency for Science, Technology, and Research (A*STAR) (#21709). B.W. acknowledges a Singapore National Research Foundation (NRF) Fellowship (NRF-NRFF2017-11). 2024-04-08T04:31:45Z 2024-04-08T04:31:45Z 2024 Journal Article Aliyar, T., Ma, H., Krishnan, R., Singh, G., Chong, B. Q., Wang, Y., Verzhbitskiy, I., Wong, C. P. Y., Goh, J. K. E., Shen, Z., Koh, T. S., Rahman, R. & Weber, B. (2024). Symmetry breaking and spin–orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers. Nano Letters, 24(7), 2142-2148. https://dx.doi.org/10.1021/acs.nanolett.3c03681 1530-6984 https://hdl.handle.net/10356/174707 10.1021/acs.nanolett.3c03681 38323571 2-s2.0-85185718179 http://arxiv.org/abs/2402.01193v2 7 24 2142 2148 en NRF-CRP21-2018-0001 MOE2018-T3-1-002 NRF-NRFF2017-11 A*STAR #21709 Nano Letters © 2024 American Chemical Society. All rights reserved. This article may be downloaded for personal use only. Any other use requires prior permission of the copyright holder. The Version of Record is available online at http://doi.org/10.1021/acs.nanolett.3c03681. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Physics
Coulomb blockade
Scanning tunneling microsopy
spellingShingle Physics
Coulomb blockade
Scanning tunneling microsopy
Aliyar, Thasneem
Ma, Hongyang
Krishnan, Radha
Singh, Gagandeep
Chong, Bi Qi
Wang, Yitao
Verzhbitskiy, Ivan
Wong, Calvin Pei Yu
Goh, Johnson Kuan Eng
Shen, Zexiang
Koh, Teck Seng
Rahman, Rajib
Weber, Bent
Symmetry breaking and spin–orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
description Spins confined to point defects in atomically thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single-photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulfur vacancies in molybdenum disulfide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. Spectroscopic mapping of defect wave functions reveals an interplay of local symmetry breaking by a charge-state-dependent Jahn-Teller lattice distortion that, when combined with strong (≃100 meV) spin-orbit coupling, leads to a locking of an unpaired spin-1/2 magnetic moment to the lattice at low temperature, susceptible to lattice strain. Our results provide new insights into the spin and electronic structure of vacancy-induced in-gap states toward their application as electrically and optically addressable quantum systems.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Aliyar, Thasneem
Ma, Hongyang
Krishnan, Radha
Singh, Gagandeep
Chong, Bi Qi
Wang, Yitao
Verzhbitskiy, Ivan
Wong, Calvin Pei Yu
Goh, Johnson Kuan Eng
Shen, Zexiang
Koh, Teck Seng
Rahman, Rajib
Weber, Bent
format Article
author Aliyar, Thasneem
Ma, Hongyang
Krishnan, Radha
Singh, Gagandeep
Chong, Bi Qi
Wang, Yitao
Verzhbitskiy, Ivan
Wong, Calvin Pei Yu
Goh, Johnson Kuan Eng
Shen, Zexiang
Koh, Teck Seng
Rahman, Rajib
Weber, Bent
author_sort Aliyar, Thasneem
title Symmetry breaking and spin–orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
title_short Symmetry breaking and spin–orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
title_full Symmetry breaking and spin–orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
title_fullStr Symmetry breaking and spin–orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
title_full_unstemmed Symmetry breaking and spin–orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
title_sort symmetry breaking and spin–orbit coupling for individual vacancy-induced in-gap states in mos2 monolayers
publishDate 2024
url https://hdl.handle.net/10356/174707
http://arxiv.org/abs/2402.01193v2
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