Reconfiguring nucleation for CVD growth of twisted bilayer MoS2 with a wide range of twist angles

• Main Authors: Xu, Manzhang, Ji, Hongjia, Zheng, Lu, Li, Weiwei, Wang, Jing, Wang, Hanxin, Luo, Lei, Lu, Qianbo, Gan, Xuetao, Liu, Zheng, Wang, Xuewen, Huang, Wei
• Other Authors: School of Materials Science and Engineering
• Format: Article
• Language: English
• Published: 2024
• Subjects: Engineering; Bilayer membrane; Chemical vapor deposition
• Online Access: https://hdl.handle.net/10356/174915
• Institution: Nanyang Technological University

Twisted bilayer (TB) transition metal dichalcogenides (TMDCs) beyond TB-graphene are considered an ideal platform for investigating condensed matter physics, due to the moiré superlattices-related peculiar band structures and distinct electronic properties. The growth of large-area and high-quality TB-TMDCs with wide twist angles would be significant for exploring twist angle-dependent physics and applications, but remains challenging to implement. Here, we propose a reconfiguring nucleation chemical vapor deposition (CVD) strategy for directly synthesizing TB-MoS2 with twist angles from 0° to 120°. The twist angles-dependent Moiré periodicity can be clearly observed, and the interlayer coupling shows a strong relationship to the twist angles. Moreover, the yield of TB-MoS2 in bilayer MoS2 and density of TB-MoS2 are significantly improved to 17.2% and 28.9 pieces/mm2 by tailoring gas flow rate and molar ratio of NaCl to MoO3. The proposed reconfiguring nucleation approach opens an avenue for the precise growth of TB-TMDCs for both fundamental research and practical applications.