Growth of gallium nitride pine tree-like nanostructures
We show the synthesis and characterization of gallium nitride pine tree-like nanostructures (GaN PTLNs) grown on silicon substrate. The PTLNs were grown in LPCVD system assisted by germanium and nickel catalyst. The PTLNs consist of a nanowire-like stem and few layer-like leaves. The high surfa...
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2024
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sg-ntu-dr.10356-1754932024-04-26T15:54:02Z Growth of gallium nitride pine tree-like nanostructures Tjahjana, Liliana Saleem, Umar Muhammad Danang Birowosuto Wang, Hong School of Electrical and Electronic Engineering 2021 International Conference on Solid State Devices and Materials (SSDM) CNRS International NTU THALES Research Alliances Physics Gallium nitride Nanowires We show the synthesis and characterization of gallium nitride pine tree-like nanostructures (GaN PTLNs) grown on silicon substrate. The PTLNs were grown in LPCVD system assisted by germanium and nickel catalyst. The PTLNs consist of a nanowire-like stem and few layer-like leaves. The high surface-to-volume ratio of the leaves may be potentially used for enhancing absorption in photovoltaic applications. Ministry of Education (MOE) Published version This research/project is supported by the Ministry of Education, Singapore, under its Academic Research Fund Tier 2 no. MOE2016-T2-1-052 and Tier 1 no. MOE2019-T1-002-063. 2024-04-26T03:03:23Z 2024-04-26T03:03:23Z 2021 Conference Paper Tjahjana, L., Saleem, U., Muhammad Danang Birowosuto & Wang, H. (2021). Growth of gallium nitride pine tree-like nanostructures. 2021 International Conference on Solid State Devices and Materials (SSDM), 602-603. https://dx.doi.org/10.7567/SSDM.2021.K-1-07 https://hdl.handle.net/10356/175493 10.7567/SSDM.2021.K-1-07 https://ssdm.jp/ https://confit.atlas.jp/guide/organizer/ssdm/events?lang=en 602 603 en MOE2016- T2-1-052 MOE2019-T1-002-063 © 2021 The Japan Society of Applied Physics. All rights reserved. This article may be downloaded for personal use only. Any other use requires prior permission of the copyright holder. The Version of Record is available online at http://doi.org/10.7567/SSDM.2021.K-1-07. application/pdf |
| institution |
Nanyang Technological University |
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NTU Library |
| continent |
Asia |
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Singapore Singapore |
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| language |
English |
| topic |
Physics Gallium nitride Nanowires |
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Physics Gallium nitride Nanowires Tjahjana, Liliana Saleem, Umar Muhammad Danang Birowosuto Wang, Hong Growth of gallium nitride pine tree-like nanostructures |
| description |
We show the synthesis and characterization of gallium
nitride pine tree-like nanostructures (GaN PTLNs) grown
on silicon substrate. The PTLNs were grown in LPCVD
system assisted by germanium and nickel catalyst. The
PTLNs consist of a nanowire-like stem and few layer-like
leaves. The high surface-to-volume ratio of the leaves may
be potentially used for enhancing absorption in
photovoltaic applications. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Tjahjana, Liliana Saleem, Umar Muhammad Danang Birowosuto Wang, Hong |
| format |
Conference or Workshop Item |
| author |
Tjahjana, Liliana Saleem, Umar Muhammad Danang Birowosuto Wang, Hong |
| author_sort |
Tjahjana, Liliana |
| title |
Growth of gallium nitride pine tree-like nanostructures |
| title_short |
Growth of gallium nitride pine tree-like nanostructures |
| title_full |
Growth of gallium nitride pine tree-like nanostructures |
| title_fullStr |
Growth of gallium nitride pine tree-like nanostructures |
| title_full_unstemmed |
Growth of gallium nitride pine tree-like nanostructures |
| title_sort |
growth of gallium nitride pine tree-like nanostructures |
| publishDate |
2024 |
| url |
https://hdl.handle.net/10356/175493 https://ssdm.jp/ https://confit.atlas.jp/guide/organizer/ssdm/events?lang=en |
| _version_ |
1806059897610043392 |