Perovskite-based thin film transistors

Perovskite-based electronic devices have gained a significant attention as of late, as perovskite-based devices has showed promising optoelectronic properties, low-cost of fabrication processes, and performance characteristics. This project explores into the many variants of perovskite materials, fo...

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Main Author: Soefianus, Melvern Johnson
Other Authors: Nripan Mathews
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2024
Subjects:
Online Access:https://hdl.handle.net/10356/176373
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1763732024-07-09T08:10:10Z Perovskite-based thin film transistors Soefianus, Melvern Johnson Nripan Mathews School of Materials Science and Engineering Nripan@ntu.edu.sg Engineering Perovskite-based electronic devices have gained a significant attention as of late, as perovskite-based devices has showed promising optoelectronic properties, low-cost of fabrication processes, and performance characteristics. This project explores into the many variants of perovskite materials, focusing on the commonly used MAPbI3 as well as new variants such as the triple cation compositions. Additionally, integrating the use of Carbon Direct Ink Writing (DIW) electrodes on said electronic devices. With thin film transistors (TFT) being the favoured platform for perovskite transistor fabrication due to the flexibility of configurations, low-cost of fabrication, tuneable properties, and ease of integration. Understanding the effects between the material properties, device structures and operating parameters of both the already well established MAPbI3 perovskites and the emerging triple cation composition perovskites will play an essential role for advancing perovskite-based TFT devices. Despite challenges such as stability under ambient conditions and scalability of production processes, continuous research efforts in material synthesis, device engineering, and operating condition optimization underscore the importance of studying perovskite-based electronic devices. Their potential to revolutionize the electronics industry by enabling cost-effective and high-performance devices makes them a compelling area of scientific inquiry and technological development. This project aims to highlight the significance of considering operating conditions in conjunction with material and device design in advancing perovskite-based transistors and optoelectronic technologies, encouraging further exploration and innovation in this exciting field. Bachelor's degree 2024-05-16T00:56:18Z 2024-05-16T00:56:18Z 2024 Final Year Project (FYP) Soefianus, M. J. (2024). Perovskite-based thin film transistors. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/176373 https://hdl.handle.net/10356/176373 en application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering
spellingShingle Engineering
Soefianus, Melvern Johnson
Perovskite-based thin film transistors
description Perovskite-based electronic devices have gained a significant attention as of late, as perovskite-based devices has showed promising optoelectronic properties, low-cost of fabrication processes, and performance characteristics. This project explores into the many variants of perovskite materials, focusing on the commonly used MAPbI3 as well as new variants such as the triple cation compositions. Additionally, integrating the use of Carbon Direct Ink Writing (DIW) electrodes on said electronic devices. With thin film transistors (TFT) being the favoured platform for perovskite transistor fabrication due to the flexibility of configurations, low-cost of fabrication, tuneable properties, and ease of integration. Understanding the effects between the material properties, device structures and operating parameters of both the already well established MAPbI3 perovskites and the emerging triple cation composition perovskites will play an essential role for advancing perovskite-based TFT devices. Despite challenges such as stability under ambient conditions and scalability of production processes, continuous research efforts in material synthesis, device engineering, and operating condition optimization underscore the importance of studying perovskite-based electronic devices. Their potential to revolutionize the electronics industry by enabling cost-effective and high-performance devices makes them a compelling area of scientific inquiry and technological development. This project aims to highlight the significance of considering operating conditions in conjunction with material and device design in advancing perovskite-based transistors and optoelectronic technologies, encouraging further exploration and innovation in this exciting field.
author2 Nripan Mathews
author_facet Nripan Mathews
Soefianus, Melvern Johnson
format Final Year Project
author Soefianus, Melvern Johnson
author_sort Soefianus, Melvern Johnson
title Perovskite-based thin film transistors
title_short Perovskite-based thin film transistors
title_full Perovskite-based thin film transistors
title_fullStr Perovskite-based thin film transistors
title_full_unstemmed Perovskite-based thin film transistors
title_sort perovskite-based thin film transistors
publisher Nanyang Technological University
publishDate 2024
url https://hdl.handle.net/10356/176373
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