Conductive bridge random access memory

• Main Author: Chia, Zong Xian
• Other Authors: Ang Diing Shenp
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2024
• Subjects: Engineering
• Online Access: https://hdl.handle.net/10356/176617
• Institution: Nanyang Technological University

This research paper contains a background of the current memory devices and the working principles as well as their limitations. As there is a high data storage demand in the future, new emerging technology is required to increase the memory storage density and improve computing efficiency. It also includes a literature review on emerging devices with the potential to replace the current technologies with an in-depth discussion on Resistive Random Access Memory (RRAM) which is intensively being studied specifically the Conductive Bridge Random Access Memory (CBRAM). It also includes electrical characteristics studies on a CBRAM device that compromises a Metal-Insulator-Metal structure of Silver (Ag) as the active electrode, Titanium Nitride (TiN) and Germanium Sulfide (GeS) used for the switching layer and Platinum (Pt) for the counter electrode which seeks to comprehend the operating characteristics of this particular device with various DC measurements.