Conductive bridge random access memory
As technology are consistently improving at a very fast rate over the years, current technologies are not able to continue supporting the high demands of specification for the newly developed applications due to lacking in terms of speed and storage density. As a result, the requirements for t...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
Nanyang Technological University
2024
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| Online Access: | https://hdl.handle.net/10356/176674 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | As technology are consistently improving at a very fast rate over the years, current
technologies are not able to continue supporting the high demands of specification for the
newly developed applications due to lacking in terms of speed and storage density. As a
result, the requirements for the establishment of advance memory technologies and
computational system for efficient computing with larger storage density are tremendous. The
need of doing in-depth research on the advance technologies is then becoming increasingly
necessary. A study of the characteristics and functionality of
Conductive-Based Resistive Random Access Memory (CBRAM) will be presented. The device is a metal-insulator-metal (MIM) structure with the materials used being silver (Ag) as active electrode,
titanium nitride and germanium suldfide (TiN/GeS) as switching layer, and platinum (Pt) as
counter electrode. |
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