2D material based high performance photodetectors (I)

• Main Author: Panicker, Varsha
• Other Authors: Wang Qijie
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2024
• Subjects: Engineering
• Online Access: https://hdl.handle.net/10356/177194
• Institution: Nanyang Technological University

Photodetectors play a crucial role in modern technology, enabling devices to detect and convert light into an electric signal. As technology advances, there is a growing demand for high-performance photodetectors that can offer enhanced sensitivity, accuracy, and efficiency. In recent years, the emergence of 2D materials has opened up new possibilities for improving the performance of photodetectors, especially in the field of graphene-based field-effect transistors (FETs). These innovations may lead to the development of more efficient and sensitive photodetection systems, benefiting fields such as communications, imaging, sensing, and renewable energy. Because graphene has better optical and electrical qualities than other potential materials like silicon or germanium, it is thought to be the best material for producing high-functioning and high-performance photosensors. The primary goal of the project is to build a field effect transistor (GrFET) based on graphene and conduct analysis on photodetection measurements. These studies provide a more in-depth analysis and research on the use of graphene as a sensor since its discovery. This project mainly includes - Extraction Process which consists of splitting large pieces of Graphite into extremely thin slices. The next step which is the Transfer process in which the selected graphene slice side is made in contact with the silicon wafer transferred over on to the PCB. Lastly diagnostic tests and polarization experiments were done which provides more information on the optoelectronic properties of graphene as a sensor.