Conductive bridge random access memory

• Main Author: Aw, Xin Zhong
• Other Authors: Ang Diing Shenp
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2024
• Subjects: Engineering; Conductive bridge
• Online Access: https://hdl.handle.net/10356/177202
• Institution: Nanyang Technological University

Conductive bridging random access memory (CBRAM) is a type of non-volatile memory technology that stores data by managing the formation of bridging filaments between two electrodes. Extensive research is being done due to its promising advantages in the memory storage industry. Advantages include high speed, low power consumption and large scalability. Discussion of the mechanism of resistive switching in CBRAM devices, highlighting the role of ion migration and filament formation in achieving reliable memory operation will be done. Development of CBRAM technology will be considered for a new storage class memory. The combination of high speed and endurance characteristics of Resistive Random Access Memory (RRAM) with the non-volatility of flash is urgently needed to fulfill the computing needs of the current Internet-of-Things era. This review offers valuable insights into the current state-of-the-art CBRAM technology and highlights its prospects for future memory and computing applications. This report delves into the underlying principles of resistive switching, examines the materials and device architectures employed in CBRAM implementation, and explores its potential applications across diverse computing domains. Additionally, we discuss ongoing research efforts, name key challenges, and propose future works.