Gallium-V antireflective nanostructures by metal-assisted chemical etching for photodetector application
With the ability to convert light signal into electrical signal, photodetectors (PDs) have been playing a crucial role in a variety of applications like imaging, environmental monitoring and military. Group III-V compound semiconductors have been drawing intensive and extensive research interest in...
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| 格式: | Thesis-Doctor of Philosophy |
| 語言: | English |
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Nanyang Technological University
2024
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| 在線閱讀: | https://hdl.handle.net/10356/177821 |
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| 機構: | Nanyang Technological University |
| 語言: | English |