High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

Despite impressive demonstrations of memristive behavior with halide perovskites, no clear pathway for material and device design exists for their applications in neuromorphic computing. Present approaches are limited to single element structures, fall behind in terms of switching reliability and sc...

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Main Authors: Vishwanath, Sujaya Kumar, Febriansyah, Benny, Ng, Si En, Das, Tisita, Acharya, Jyotibdha, John, Rohit Abraham, Sharma, Divyam, Dananjaya, Putu Andhita, Jagadeeswararao, Metikoti, Tiwari, Naveen, Kulkarni, Mohit Ramesh Chandra, Lew, Wen Siang, Chakraborty, Sudip, Basu, Arindam, Mathews, Nripan
Other Authors: School of Materials Science and Engineering
Format: Article
Language:English
Published: 2024
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Online Access:https://hdl.handle.net/10356/178261
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1782612024-06-14T15:44:49Z High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing Vishwanath, Sujaya Kumar Febriansyah, Benny Ng, Si En Das, Tisita Acharya, Jyotibdha John, Rohit Abraham Sharma, Divyam Dananjaya, Putu Andhita Jagadeeswararao, Metikoti Tiwari, Naveen Kulkarni, Mohit Ramesh Chandra Lew, Wen Siang Chakraborty, Sudip Basu, Arindam Mathews, Nripan School of Materials Science and Engineering School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences Energy Research Institute @ NTU (ERI@N) Engineering Halide perovskites Memristive behavior Despite impressive demonstrations of memristive behavior with halide perovskites, no clear pathway for material and device design exists for their applications in neuromorphic computing. Present approaches are limited to single element structures, fall behind in terms of switching reliability and scalability, and fail to map out the analog programming window of such devices. Here, we systematically design and evaluate robust pyridinium-templated one-dimensional halide perovskites as crossbar memristive materials for artificial neural networks. We compare two halide perovskite 1D inorganic lattices, namely (propyl)pyridinium and (benzyl)pyridinium lead iodide. The absence of conjugated, electron-rich substituents in PrPyr+ prevents edge-to-face type π-stacking, leading to enhanced electronic isolation of the 1D iodoplumbate chains in (PrPyr)[PbI3], and hence, superior resistive switching performance compared to (BnzPyr)[PbI3]. We report outstanding resistive switching behaviours in (PrPyr)[PbI3] on the largest flexible crossbar implementation (16 × 16) to date - on/off ratio (>105), long term retention (105 s) and high endurance (2000 cycles). Finally, we put forth a universal approach to comprehensively map the analog programming window of halide perovskite memristive devices - a critical prerequisite for weighted synaptic connections in artificial neural networks. This consequently facilitates the demonstration of accurate handwritten digit recognition from the MNIST database based on spike-timing-dependent plasticity of halide perovskite memristive synapses. Ministry of Education (MOE) National Research Foundation (NRF) Published version This research was funded by the Ministry of Education, Singapore Tier 2 Grant-MOE2018-T2-2-083 and National Research Foundation, Prime Minister’s Office, Singapore under its Competitive Research Programme (CRP Award No. NRF-CRP14-2014-03). T. D. and S. C. would like to acknowledge HRI Allahabad and DST-SERB Funding (SRG/2020/001707) for the infrastructure and funding. 2024-06-10T02:14:21Z 2024-06-10T02:14:21Z 2024 Journal Article Vishwanath, S. K., Febriansyah, B., Ng, S. E., Das, T., Acharya, J., John, R. A., Sharma, D., Dananjaya, P. A., Jagadeeswararao, M., Tiwari, N., Kulkarni, M. R. C., Lew, W. S., Chakraborty, S., Basu, A. & Mathews, N. (2024). High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing. Materials Horizons, 11(11), 2643-2656. https://dx.doi.org/10.1039/d3mh02055j 2051-6355 https://hdl.handle.net/10356/178261 10.1039/d3mh02055j 38516931 2-s2.0-85188719905 11 11 2643 2656 en MOE2018-T2-2-083 NRF-CRP14-2014-03 Materials Horizons © The Authors. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering
Halide perovskites
Memristive behavior
spellingShingle Engineering
Halide perovskites
Memristive behavior
Vishwanath, Sujaya Kumar
Febriansyah, Benny
Ng, Si En
Das, Tisita
Acharya, Jyotibdha
John, Rohit Abraham
Sharma, Divyam
Dananjaya, Putu Andhita
Jagadeeswararao, Metikoti
Tiwari, Naveen
Kulkarni, Mohit Ramesh Chandra
Lew, Wen Siang
Chakraborty, Sudip
Basu, Arindam
Mathews, Nripan
High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing
description Despite impressive demonstrations of memristive behavior with halide perovskites, no clear pathway for material and device design exists for their applications in neuromorphic computing. Present approaches are limited to single element structures, fall behind in terms of switching reliability and scalability, and fail to map out the analog programming window of such devices. Here, we systematically design and evaluate robust pyridinium-templated one-dimensional halide perovskites as crossbar memristive materials for artificial neural networks. We compare two halide perovskite 1D inorganic lattices, namely (propyl)pyridinium and (benzyl)pyridinium lead iodide. The absence of conjugated, electron-rich substituents in PrPyr+ prevents edge-to-face type π-stacking, leading to enhanced electronic isolation of the 1D iodoplumbate chains in (PrPyr)[PbI3], and hence, superior resistive switching performance compared to (BnzPyr)[PbI3]. We report outstanding resistive switching behaviours in (PrPyr)[PbI3] on the largest flexible crossbar implementation (16 × 16) to date - on/off ratio (>105), long term retention (105 s) and high endurance (2000 cycles). Finally, we put forth a universal approach to comprehensively map the analog programming window of halide perovskite memristive devices - a critical prerequisite for weighted synaptic connections in artificial neural networks. This consequently facilitates the demonstration of accurate handwritten digit recognition from the MNIST database based on spike-timing-dependent plasticity of halide perovskite memristive synapses.
author2 School of Materials Science and Engineering
author_facet School of Materials Science and Engineering
Vishwanath, Sujaya Kumar
Febriansyah, Benny
Ng, Si En
Das, Tisita
Acharya, Jyotibdha
John, Rohit Abraham
Sharma, Divyam
Dananjaya, Putu Andhita
Jagadeeswararao, Metikoti
Tiwari, Naveen
Kulkarni, Mohit Ramesh Chandra
Lew, Wen Siang
Chakraborty, Sudip
Basu, Arindam
Mathews, Nripan
format Article
author Vishwanath, Sujaya Kumar
Febriansyah, Benny
Ng, Si En
Das, Tisita
Acharya, Jyotibdha
John, Rohit Abraham
Sharma, Divyam
Dananjaya, Putu Andhita
Jagadeeswararao, Metikoti
Tiwari, Naveen
Kulkarni, Mohit Ramesh Chandra
Lew, Wen Siang
Chakraborty, Sudip
Basu, Arindam
Mathews, Nripan
author_sort Vishwanath, Sujaya Kumar
title High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing
title_short High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing
title_full High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing
title_fullStr High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing
title_full_unstemmed High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing
title_sort high-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing
publishDate 2024
url https://hdl.handle.net/10356/178261
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