Orbital origin of the intrinsic planar Hall effect

Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin origin, which requires spin-orbit coupling to take effect. He...

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Main Authors: Wang, Hui, Huang, Yue-Xin, Liu, Huiying, Feng, Xiaolong, Zhu, Jiaojiao, Wu, Weikang, Xiao, Cong, Yang, Shengyuan A.
Other Authors: School of Physical and Mathematical Sciences
Format: Article
Language:English
Published: 2024
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Online Access:https://hdl.handle.net/10356/178310
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1783102024-06-11T06:27:34Z Orbital origin of the intrinsic planar Hall effect Wang, Hui Huang, Yue-Xin Liu, Huiying Feng, Xiaolong Zhu, Jiaojiao Wu, Weikang Xiao, Cong Yang, Shengyuan A. School of Physical and Mathematical Sciences Research Laboratory for Quantum Materials, SUTD Physics Planar Hall effect Orbitals Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin origin, which requires spin-orbit coupling to take effect. Here, we develop a general theory for the intrinsic planar Hall effect (IPHE), highlighting a previously unknown orbital mechanism and connecting it to a band geometric quantity-the anomalous orbital polarizability (AOP). Importantly, the orbital mechanism does not request spin-orbit coupling, so sizable IPHE can occur and is dominated by an orbital contribution in systems with weak spin-orbit coupling. Combined with first-principles calculations, we demonstrate our theory with quantitative evaluation for bulk materials TaSb_{2}, NbAs_{2}, and SrAs_{3}. We further show that AOP and its associated orbital IPHE can be greatly enhanced at topological band crossings, offering a new way to probe topological materials. National Research Foundation (NRF) This work is supported by Singapore NRF CRP22-2019-0061, UM Start-up Grant (SRG2023-00057-IAPME, SRG2023- 00033-IAPME), National Natural Science Foundation of China (No. 12304053), Shandong Provincial Natural Science Foundation (Grant No. ZR2023QA012) and Special Funding in the Project of Qilu Young Scholar Program of Shandong University. 2024-06-11T06:27:33Z 2024-06-11T06:27:33Z 2024 Journal Article Wang, H., Huang, Y., Liu, H., Feng, X., Zhu, J., Wu, W., Xiao, C. & Yang, S. A. (2024). Orbital origin of the intrinsic planar Hall effect. Physical Review Letters, 132(5), 056301-. https://dx.doi.org/10.1103/PhysRevLett.132.056301 0031-9007 https://hdl.handle.net/10356/178310 10.1103/PhysRevLett.132.056301 38364160 2-s2.0-85183977003 5 132 056301 en CRP22-2019-0061 Physical review letters © 2024 American Physical Society. All rights reserved.
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Physics
Planar Hall effect
Orbitals
spellingShingle Physics
Planar Hall effect
Orbitals
Wang, Hui
Huang, Yue-Xin
Liu, Huiying
Feng, Xiaolong
Zhu, Jiaojiao
Wu, Weikang
Xiao, Cong
Yang, Shengyuan A.
Orbital origin of the intrinsic planar Hall effect
description Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin origin, which requires spin-orbit coupling to take effect. Here, we develop a general theory for the intrinsic planar Hall effect (IPHE), highlighting a previously unknown orbital mechanism and connecting it to a band geometric quantity-the anomalous orbital polarizability (AOP). Importantly, the orbital mechanism does not request spin-orbit coupling, so sizable IPHE can occur and is dominated by an orbital contribution in systems with weak spin-orbit coupling. Combined with first-principles calculations, we demonstrate our theory with quantitative evaluation for bulk materials TaSb_{2}, NbAs_{2}, and SrAs_{3}. We further show that AOP and its associated orbital IPHE can be greatly enhanced at topological band crossings, offering a new way to probe topological materials.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Wang, Hui
Huang, Yue-Xin
Liu, Huiying
Feng, Xiaolong
Zhu, Jiaojiao
Wu, Weikang
Xiao, Cong
Yang, Shengyuan A.
format Article
author Wang, Hui
Huang, Yue-Xin
Liu, Huiying
Feng, Xiaolong
Zhu, Jiaojiao
Wu, Weikang
Xiao, Cong
Yang, Shengyuan A.
author_sort Wang, Hui
title Orbital origin of the intrinsic planar Hall effect
title_short Orbital origin of the intrinsic planar Hall effect
title_full Orbital origin of the intrinsic planar Hall effect
title_fullStr Orbital origin of the intrinsic planar Hall effect
title_full_unstemmed Orbital origin of the intrinsic planar Hall effect
title_sort orbital origin of the intrinsic planar hall effect
publishDate 2024
url https://hdl.handle.net/10356/178310
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