Electrical and physical property study of thin films grown by laser molecular beam epitaxy
In this project, 50nm/100nm-thick epitaxial SrRuO3 and BaTiO3 thin films were grown on <100>, <110> and <111> SrTiO3 substrates by Laser Molecular Beam Epitaxy (LMBE) at 650°C. Lift-off process is performed to create the metallic contact for the resistivity characterization on Sr...
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格式: | Final Year Project |
語言: | English |
出版: |
2009
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在線閱讀: | http://hdl.handle.net/10356/17882 |
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機構: | Nanyang Technological University |
語言: | English |
總結: | In this project, 50nm/100nm-thick epitaxial SrRuO3 and BaTiO3 thin films were grown on <100>, <110> and <111> SrTiO3 substrates by Laser Molecular Beam Epitaxy (LMBE) at 650°C. Lift-off process is performed to create the metallic contact for the resistivity characterization on SrRuO3/ SrTiO3 and capacitance characterization on BaTiO3/ SrTiO3.
The experiment result shows that the resistivity is dependent on the film crystal orientation. The resistivity of <100> SrRuO3/ SrTiO3 is the lowest, followed by the resistivity of <111> SrRuO3/ SrTiO3 and the resistivity of <110> SrRuO3/ SrTiO3 is the highest.
The ferroelectricity of BaTiO3 makes it a suitable material to make capacitor due to its high dielectric constant. This is critical as it allows a thicker insulating layer while maintaining a high capacitance to reduce the resulting leakage current. |
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