Electrical and physical property study of thin films grown by laser molecular beam epitaxy

• المؤلف الرئيسي: Choy, Chang Ye.
• مؤلفون آخرون: Zhu Weiguang
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/17882

In this project, 50nm/100nm-thick epitaxial SrRuO3 and BaTiO3 thin films were grown on <100>, <110> and <111> SrTiO3 substrates by Laser Molecular Beam Epitaxy (LMBE) at 650°C. Lift-off process is performed to create the metallic contact for the resistivity characterization on SrRuO3/ SrTiO3 and capacitance characterization on BaTiO3/ SrTiO3. The experiment result shows that the resistivity is dependent on the film crystal orientation. The resistivity of <100> SrRuO3/ SrTiO3 is the lowest, followed by the resistivity of <111> SrRuO3/ SrTiO3 and the resistivity of <110> SrRuO3/ SrTiO3 is the highest. The ferroelectricity of BaTiO3 makes it a suitable material to make capacitor due to its high dielectric constant. This is critical as it allows a thicker insulating layer while maintaining a high capacitance to reduce the resulting leakage current.