IPTO 薄膜制备及其在有机光电器件中的应用 = Preparation of transparent conductive praseodymium titanate doped indium oxide film and its application in organic opto-electronic devices

• Main Authors: Tian, Miao-miao, He, Xiao-guang, Qi, Jin-gang, Wang, Ning
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: Chinese
• Published: 2024
• Subjects: Engineering; Transparent conductive oxide 透明导电薄膜; Work function 功函数
• Online Access: https://hdl.handle.net/10356/180732; https://cjl.lightpublishing.cn/thesisDetails?columnId=1622713&lang=zh
• Institution: Nanyang Technological University

新型IPTO(PrTiO3掺杂In2O3)薄膜的可见光透过率及导电性可与商业化的ITO薄膜媲美。采用双源电子束设备制备了一种新型的IPTO透明导电薄膜,通过开尔文探针法测试,其功函数为5.14 eV。为验证新型IPTO透明导电阳极对有机电致发光器件性能的影响,将IPTO替代商业化ITO作为阳极制备了有机电致发光器件。基于IPTO阳极的器件的亮度最大值为85 140 cd/m2,外量子效率最大值为3.16%,分别为以ITO为阳极的器件的3倍及1.13倍。这种性能的改善是由于IPTO具有较小的表面粗糙度及较高的功函数,可以降低阳极的注入势垒,有利于电荷向有机层注入,改善了器件内的空穴及电子的注入平衡。A novel transparent conducting oxide, PrTiO3-doped indium oxide (IPTO), is developed via double source reactive electron beam evaporation technology. The film exhibits a high work function of 5.14 eV and its stability is demonstrated in air for two months. The numerical values of optical and electrical properties of IPTO film and the commercial ITO are similar. Two OLEDs were fabricated by employing IPTO and ITO as anode, respectively. For device with IPTO anode, the peak luminance is 85140 cd/m2 and maximum external quantum efficiency is 3.16%, which are 3 times and 1.13 times of the ITO device. It has been demonstrated that the improvements in device performance are achieved for the IPTO-anode OLED.