Graphene-Si solar cells using 2D hBN monolayer passivation

This project explores the integration of graphene and 2D hexagonal boron nitride (hBN) monolayers in silicon (Si) solar cells to enhance efficiency and stability. Graphene’s high electrical conductivity and transparency, coupled with hBN’s dielectric properties, offer a promising approach to reducin...

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Main Author: Mohamed Ashraf Bin Mohamed Abubakar
Other Authors: Kim Munho
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2024
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Online Access:https://hdl.handle.net/10356/181686
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1816862024-12-20T15:45:36Z Graphene-Si solar cells using 2D hBN monolayer passivation Mohamed Ashraf Bin Mohamed Abubakar Kim Munho School of Electrical and Electronic Engineering munho.kim@ntu.edu.sg Engineering Graphene-Si solar cells using 2D hBN monolayer passivation This project explores the integration of graphene and 2D hexagonal boron nitride (hBN) monolayers in silicon (Si) solar cells to enhance efficiency and stability. Graphene’s high electrical conductivity and transparency, coupled with hBN’s dielectric properties, offer a promising approach to reducing surface recombination losses. The study involves the fabrication of Graphene-Si solar cells with hBN passivation, comparing their performance with other variants, including black graphene, black hBN graphene, and planar graphene. Using chemical vapor deposition (CVD), graphene and hBN layers were deposited on Si substrates, followed by current-voltage (IV) measurements and irradiance testing. Key performance indicators such as open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF), and efficiency (η) were analyzed to evaluate the role of hBN in improving surface passivation and charge carrier mobility. The results show that Graphene-Si solar cells with hBN passivation outperform conventional Si cells and other graphene variants, particularly under varying irradiance levels. hBN effectively reduces surface recombination, enhancing efficiency. While black graphene and black hBN graphene improve light absorption, they do not provide the same level of recombination suppression. Planar graphene cells exhibited limited improvements. In addition, long-term stability tests, including thermal cycling, light exposure, and humidity resistance, revealed that hBN passivation significantly enhances durability, with minimal degradation in Voc and Isc over time. These findings demonstrate the potential of combining graphene with hBN passivation for improved photovoltaic performance and longevity, positioning graphene-based solar cells as a promising solution for next-generation solar technology. Bachelor's degree 2024-12-16T00:44:44Z 2024-12-16T00:44:44Z 2024 Final Year Project (FYP) Mohamed Ashraf Bin Mohamed Abubakar (2024). Graphene-Si solar cells using 2D hBN monolayer passivation. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/181686 https://hdl.handle.net/10356/181686 en P2017-231 application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering
Graphene-Si solar cells using 2D hBN monolayer passivation
spellingShingle Engineering
Graphene-Si solar cells using 2D hBN monolayer passivation
Mohamed Ashraf Bin Mohamed Abubakar
Graphene-Si solar cells using 2D hBN monolayer passivation
description This project explores the integration of graphene and 2D hexagonal boron nitride (hBN) monolayers in silicon (Si) solar cells to enhance efficiency and stability. Graphene’s high electrical conductivity and transparency, coupled with hBN’s dielectric properties, offer a promising approach to reducing surface recombination losses. The study involves the fabrication of Graphene-Si solar cells with hBN passivation, comparing their performance with other variants, including black graphene, black hBN graphene, and planar graphene. Using chemical vapor deposition (CVD), graphene and hBN layers were deposited on Si substrates, followed by current-voltage (IV) measurements and irradiance testing. Key performance indicators such as open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF), and efficiency (η) were analyzed to evaluate the role of hBN in improving surface passivation and charge carrier mobility. The results show that Graphene-Si solar cells with hBN passivation outperform conventional Si cells and other graphene variants, particularly under varying irradiance levels. hBN effectively reduces surface recombination, enhancing efficiency. While black graphene and black hBN graphene improve light absorption, they do not provide the same level of recombination suppression. Planar graphene cells exhibited limited improvements. In addition, long-term stability tests, including thermal cycling, light exposure, and humidity resistance, revealed that hBN passivation significantly enhances durability, with minimal degradation in Voc and Isc over time. These findings demonstrate the potential of combining graphene with hBN passivation for improved photovoltaic performance and longevity, positioning graphene-based solar cells as a promising solution for next-generation solar technology.
author2 Kim Munho
author_facet Kim Munho
Mohamed Ashraf Bin Mohamed Abubakar
format Final Year Project
author Mohamed Ashraf Bin Mohamed Abubakar
author_sort Mohamed Ashraf Bin Mohamed Abubakar
title Graphene-Si solar cells using 2D hBN monolayer passivation
title_short Graphene-Si solar cells using 2D hBN monolayer passivation
title_full Graphene-Si solar cells using 2D hBN monolayer passivation
title_fullStr Graphene-Si solar cells using 2D hBN monolayer passivation
title_full_unstemmed Graphene-Si solar cells using 2D hBN monolayer passivation
title_sort graphene-si solar cells using 2d hbn monolayer passivation
publisher Nanyang Technological University
publishDate 2024
url https://hdl.handle.net/10356/181686
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