Field-free superconducting diode effect and magnetochiral anisotropy in FeTe0.7Se0.3 junctions with the inherent asymmetric barrier

Nonreciprocal electrical transport, characterized by an asymmetric relationship between the current and voltage, plays a crucial role in modern electronic industries. Recent studies have extended this phenomenon to superconductors, introducing the concept of the superconducting diode effect (SDE). T...

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Main Authors: Li, Shengyao, Deng, Ya, Hu, Dianyi, Zhu, Chao, Yang, Zherui, Tian, Wanghao, Wang, Xueyan, Yue, Ming, Wu, Qiong, Liu, Zheng, Wang, Renshaw Xiao
Other Authors: School of Physical and Mathematical Sciences
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Language:English
Published: 2025
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Online Access:https://hdl.handle.net/10356/182964
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spelling sg-ntu-dr.10356-1829642025-03-11T07:15:57Z Field-free superconducting diode effect and magnetochiral anisotropy in FeTe0.7Se0.3 junctions with the inherent asymmetric barrier Li, Shengyao Deng, Ya Hu, Dianyi Zhu, Chao Yang, Zherui Tian, Wanghao Wang, Xueyan Yue, Ming Wu, Qiong Liu, Zheng Wang, Renshaw Xiao School of Physical and Mathematical Sciences School of Materials Science and Engineering School of Electrical and Electronic Engineering Cintra CNRS/NTU/THALES UMI 3288 Engineering Chemical vapor deposition Electrical magnetochiral anisotropy Nonreciprocal electrical transport, characterized by an asymmetric relationship between the current and voltage, plays a crucial role in modern electronic industries. Recent studies have extended this phenomenon to superconductors, introducing the concept of the superconducting diode effect (SDE). The SDE is characterized by unequal critical supercurrents along opposite directions. Due to the requirement on broken inversion symmetry, the SDE is commonly accompanied by electrical magnetochiral anisotropy (eMCA) in the resistive state. Achieving a magnetic-field-free SDE with field tunability is pivotal for advancements in superconductor devices. Conventionally, field-free SDE has been achieved in Josephson junctions by intentionally intercalating an asymmetric barrier layer. Alternatively, internal magnetism was employed. Both approaches pose challenges in the selection of superconductors and fabrication processes, thereby impeding the development of SDE. Here, we present a field-free SDE in FeTe0.7Se0.3 (FTS) junction with eMCA, a phenomenon absent in FTS single nanosheets. The field-free property is associated with the presence of a gradient oxide layer on the upper surface of each FTS nanosheet, while eMCA is linked to spin splitting arising from the absence of inversion symmetry. Both SDE and eMCA respond to magnetic fields with distinct temperature dependencies. This work presents a versatile and straightforward strategy for advancing superconducting electronics. Agency for Science, Technology and Research (A*STAR) Ministry of Education (MOE) National Research Foundation (NRF) X.R.W. acknowledges support from the Academic Research Fund Tier 2 (Grant No. MOE-T2EP50210-0006 and MOE-T2EP50220-0016) and Tier 3 (Grant No. MOE2018-T3-1-002) from the Singapore Ministry of Education and Agency for Science, Technology, and Research (A*STAR) under its AMEIRG grant (Project no. A20E5c0094). This research is also supported by the Singapore Ministry of Education (MOE) Academic Research Fund Tier 3 grant (MOE-MOET32023-0003), “Quantum Geometric Advantage”. Z.L. acknowledges the support from the National Research Foundation, Singapore, under its Competitive Research Programme (CRP) (NRF-CRP22-2019-0007 and NRF-CRP22-2019-0004), under its NRF-ISF joint research program (NRF2020-NRF-ISF004-3520). Q.W. acknowledges the support from the National Natural Science Foundation of China (Grant No. 52271161). 2025-03-11T07:15:57Z 2025-03-11T07:15:57Z 2024 Journal Article Li, S., Deng, Y., Hu, D., Zhu, C., Yang, Z., Tian, W., Wang, X., Yue, M., Wu, Q., Liu, Z. & Wang, R. X. (2024). Field-free superconducting diode effect and magnetochiral anisotropy in FeTe0.7Se0.3 junctions with the inherent asymmetric barrier. ACS Nano, 18(45), 31076-31084. https://dx.doi.org/10.1021/acsnano.4c07951 1936-0851 https://hdl.handle.net/10356/182964 10.1021/acsnano.4c07951 39432376 2-s2.0-85206929817 45 18 31076 31084 en MOE-T2EP50210-0006 MOE-T2EP50220-0016 MOE 2018-T3-1-002 A20E5c0094 MOE-MOET32023-0003 NRF-CRP22-2019-0007 NRF-CRP22-2019-0004 NRF2020-NRF-ISF004-3520 ACS Nano © 2024 American Chemical Society. All rights reserved.
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering
Chemical vapor deposition
Electrical magnetochiral anisotropy
spellingShingle Engineering
Chemical vapor deposition
Electrical magnetochiral anisotropy
Li, Shengyao
Deng, Ya
Hu, Dianyi
Zhu, Chao
Yang, Zherui
Tian, Wanghao
Wang, Xueyan
Yue, Ming
Wu, Qiong
Liu, Zheng
Wang, Renshaw Xiao
Field-free superconducting diode effect and magnetochiral anisotropy in FeTe0.7Se0.3 junctions with the inherent asymmetric barrier
description Nonreciprocal electrical transport, characterized by an asymmetric relationship between the current and voltage, plays a crucial role in modern electronic industries. Recent studies have extended this phenomenon to superconductors, introducing the concept of the superconducting diode effect (SDE). The SDE is characterized by unequal critical supercurrents along opposite directions. Due to the requirement on broken inversion symmetry, the SDE is commonly accompanied by electrical magnetochiral anisotropy (eMCA) in the resistive state. Achieving a magnetic-field-free SDE with field tunability is pivotal for advancements in superconductor devices. Conventionally, field-free SDE has been achieved in Josephson junctions by intentionally intercalating an asymmetric barrier layer. Alternatively, internal magnetism was employed. Both approaches pose challenges in the selection of superconductors and fabrication processes, thereby impeding the development of SDE. Here, we present a field-free SDE in FeTe0.7Se0.3 (FTS) junction with eMCA, a phenomenon absent in FTS single nanosheets. The field-free property is associated with the presence of a gradient oxide layer on the upper surface of each FTS nanosheet, while eMCA is linked to spin splitting arising from the absence of inversion symmetry. Both SDE and eMCA respond to magnetic fields with distinct temperature dependencies. This work presents a versatile and straightforward strategy for advancing superconducting electronics.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Li, Shengyao
Deng, Ya
Hu, Dianyi
Zhu, Chao
Yang, Zherui
Tian, Wanghao
Wang, Xueyan
Yue, Ming
Wu, Qiong
Liu, Zheng
Wang, Renshaw Xiao
format Article
author Li, Shengyao
Deng, Ya
Hu, Dianyi
Zhu, Chao
Yang, Zherui
Tian, Wanghao
Wang, Xueyan
Yue, Ming
Wu, Qiong
Liu, Zheng
Wang, Renshaw Xiao
author_sort Li, Shengyao
title Field-free superconducting diode effect and magnetochiral anisotropy in FeTe0.7Se0.3 junctions with the inherent asymmetric barrier
title_short Field-free superconducting diode effect and magnetochiral anisotropy in FeTe0.7Se0.3 junctions with the inherent asymmetric barrier
title_full Field-free superconducting diode effect and magnetochiral anisotropy in FeTe0.7Se0.3 junctions with the inherent asymmetric barrier
title_fullStr Field-free superconducting diode effect and magnetochiral anisotropy in FeTe0.7Se0.3 junctions with the inherent asymmetric barrier
title_full_unstemmed Field-free superconducting diode effect and magnetochiral anisotropy in FeTe0.7Se0.3 junctions with the inherent asymmetric barrier
title_sort field-free superconducting diode effect and magnetochiral anisotropy in fete0.7se0.3 junctions with the inherent asymmetric barrier
publishDate 2025
url https://hdl.handle.net/10356/182964
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