Microwave power amplifier design for WiMAX subsciber station

In this project, the design and development of power amplifier intended for wireless communication at 5.8GHz is carried out. Heterojunction bipolar transistor (HBT) is chosen as active device due to its excellent performance in high frequency region. The amplifier is built as switching amplifier to...

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書目詳細資料
主要作者: Adi Wibowo, Nicholas
其他作者: Law Choi Look
格式: Final Year Project
語言:English
出版: 2009
主題:
在線閱讀:http://hdl.handle.net/10356/18390
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機構: Nanyang Technological University
語言: English
實物特徵
總結:In this project, the design and development of power amplifier intended for wireless communication at 5.8GHz is carried out. Heterojunction bipolar transistor (HBT) is chosen as active device due to its excellent performance in high frequency region. The amplifier is built as switching amplifier to achieve high efficiency. At first, the amplifier is planned to be built as class E, however, the large output capacitance of active device prevents its effective operation. Therefore, a class F amplifier is considered for the design of this amplifier. This development is done with the help of Agilent ADS software and includes device characterization; several electrical test including bias, load pull, and S-parameter test; and matching circuit design. The simulation results of the amplifier verify the switching characteristic of class F amplifiers with square and half-sinusoidal waveform. The design using ideal component show that the transistor is able to produce 30dBm output power with more than 50% PAE. Using the real component model, the amplifier produce 30dBm output power at 18dBm input power with 54.619% PAE.