Microwave power amplifier design for WiMAX subsciber station
In this project, the design and development of power amplifier intended for wireless communication at 5.8GHz is carried out. Heterojunction bipolar transistor (HBT) is chosen as active device due to its excellent performance in high frequency region. The amplifier is built as switching amplifier to...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/18390 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | In this project, the design and development of power amplifier intended for wireless communication at 5.8GHz is carried out. Heterojunction bipolar transistor (HBT) is chosen as active device due to its excellent performance in high frequency region. The amplifier is built as switching amplifier to achieve high efficiency. At first, the amplifier is planned to be built as class E, however, the large output capacitance of active device prevents its effective operation. Therefore, a class F amplifier is considered for the design of this amplifier.
This development is done with the help of Agilent ADS software and includes device characterization; several electrical test including bias, load pull, and S-parameter test; and matching circuit design. The simulation results of the amplifier verify the switching characteristic of class F amplifiers with square and half-sinusoidal waveform. The design using ideal component show that the transistor is able to produce 30dBm output power with more than 50% PAE. Using the real component model, the amplifier produce 30dBm output power at 18dBm input power with 54.619% PAE. |
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