Growth and electrical properties of LuFe2O4 crystal.
Materials with resistive switching capabilities upon external stimulus are drawing more attention due to its rich physics as well as great potential in developing electronic devices. One of its potential applications is in developing new memory schemes based on a change of electrical properties upon...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/18431 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Materials with resistive switching capabilities upon external stimulus are drawing more attention due to its rich physics as well as great potential in developing electronic devices. One of its potential applications is in developing new memory schemes based on a change of electrical properties upon external stimulus. LuFe2O4 has emerged as one of the candidates to be used in this memory schemes.
LuFe2O4 has a large change of resistivity upon applied electric field, usually termed as the electroresistance effect. This effect occurs at room temperature and requires small electric field, which is beneficial for practical applications.
In this project, we aim to study the electrical properties of LuFe2O4 and do the first attempt to grow LuFe2O4 thin film. The LuFe2O4 crystal was grown using solid state reaction method. The investigation of electrical properties of LuFe2O4 was done using Physical Property Measurement System (PPMS). LuFe2O4 thin film was grown using laser vapor deposition method. |
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