Solitary confinement for spins in atomically-thin semiconductors

• المؤلف الرئيسي: Muhammad Syahril Bin Roslan
• مؤلفون آخرون: Bent Weber
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2025
• الموضوعات: Physics; 2D materials; Atomic defects; Transition metal oxide; Quantum emission
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/184330
• المؤسسة: Nanyang Technological University

Electrons and spins can be confined to atomic defects in atomically thin semiconductors and insulators. These defects may induce intermediate gap states, which alters the electrical and optical properties of the material and can be potentially be harnessed towards applications in quantum technology....