Optical characterization of semiconductor quantum wells
Semiconductor Quantum wells are the important structures in optoelectronic devices. The quality of quantum wells depends heavily on the interface and the carrier transfer along or through the interfaces. In the present study, the effect of growth interruption on quantum well interfaces and induced l...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/19630 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Semiconductor Quantum wells are the important structures in optoelectronic devices. The quality of quantum wells depends heavily on the interface and the carrier transfer along or through the interfaces. In the present study, the effect of growth interruption on quantum well interfaces and induced localization and transfer of excitons are characterized by photoluminescence spectrum. The phenomenon of hot carriers caused by resonant tunneling in coupled double wells is also studied. |
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