Fabrication and characterization of AlGaAs/InGaAs-based pseudomorphic high electron mobility transistors (pHEMTs)

• المؤلف الرئيسي: Lee, Hou Jang.
• مؤلفون آخرون: Tse, Man Siu
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/19634

This work demonstrates the fabrication and operation of several types of pseudomorphic high electron mobility transistors (pHEMTs) and heterostructure field effect transistors (HFETs), which were our initial effort in gallium arsenide (GaAs) device fabrication. The aim of this work is to develop a r...