Characterisation of compound semiconductors grown by molecular beam epitaxy
In this thesis, molecular beam epitaxy (MBE)growth, the optical and luminescence properties and crystalline quality of Ini.x.yGaxAlyAs layers on InP (100)substrates are studied.
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2009
|
| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/19771 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|