Fabrication and characterization of microelectronic circuits and systems (II)
This thesis presents the development and application of a simulation program that is capable of describing the behavior of pHEMTs using the GaInP/InGaAs material system.
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Format: | Research Report |
Published: |
2008
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Online Access: | http://hdl.handle.net/10356/2764 |
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Institution: | Nanyang Technological University |
Summary: | This thesis presents the development and application of a simulation program that is capable of describing the behavior of pHEMTs using the GaInP/InGaAs material system. |
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