Fabrication and characterisation of Silicon-Germanium Schottky diode

Fabrication and characterisation of Silicon-Germanium Schottky diode

In this project, both the silicon and silicon germanium schottky barrier diode were fabricated and studied. Pt, Ti and W metal were investigated as schottky materials. Pt/n-Si, Ti/n-Si, W/n-Si, Pt/p-Si, Ti/p-Si and W/p-Si schottky diodes were fabricated and found to give good quality schottky diode...

Full description

Saved in:
Bibliographic Details
Main Author: Tan, Oscar Aik Poh.
Other Authors: Tse, Man Siu
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/3328
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
id sg-ntu-dr.10356-3328
record_format dspace
spelling sg-ntu-dr.10356-33282023-07-04T15:17:07Z Fabrication and characterisation of Silicon-Germanium Schottky diode Tan, Oscar Aik Poh. Tse, Man Siu School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors In this project, both the silicon and silicon germanium schottky barrier diode were fabricated and studied. Pt, Ti and W metal were investigated as schottky materials. Pt/n-Si, Ti/n-Si, W/n-Si, Pt/p-Si, Ti/p-Si and W/p-Si schottky diodes were fabricated and found to give good quality schottky diode performance with suitable fine-tuning of the fabrication process to reduce over-alloying. Master of Science (Microelectronics) 2008-09-17T09:27:30Z 2008-09-17T09:27:30Z 2003 2003 Thesis http://hdl.handle.net/10356/3328 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Tan, Oscar Aik Poh.
Fabrication and characterisation of Silicon-Germanium Schottky diode
description In this project, both the silicon and silicon germanium schottky barrier diode were fabricated and studied. Pt, Ti and W metal were investigated as schottky materials. Pt/n-Si, Ti/n-Si, W/n-Si, Pt/p-Si, Ti/p-Si and W/p-Si schottky diodes were fabricated and found to give good quality schottky diode performance with suitable fine-tuning of the fabrication process to reduce over-alloying.
author2 Tse, Man Siu
author_facet Tse, Man Siu
Tan, Oscar Aik Poh.
format Theses and Dissertations
author Tan, Oscar Aik Poh.
author_sort Tan, Oscar Aik Poh.
title Fabrication and characterisation of Silicon-Germanium Schottky diode
title_short Fabrication and characterisation of Silicon-Germanium Schottky diode
title_full Fabrication and characterisation of Silicon-Germanium Schottky diode
title_fullStr Fabrication and characterisation of Silicon-Germanium Schottky diode
title_full_unstemmed Fabrication and characterisation of Silicon-Germanium Schottky diode
title_sort fabrication and characterisation of silicon-germanium schottky diode
publishDate 2008
url http://hdl.handle.net/10356/3328
_version_ 1772827503609511936

Similar Items