A 2.45GHz CMOS PA+T/R switch for wireless communication
This thesis describes the design of an RF CMOS Power Amplifier (PA) combined with a T/R switch in a conventional CMOS process. The Power Amplifier is designed for all applications in the ISM (Industry Science and Medical) band, which has a transmit frequency of 2.4~2.4835 GHz and requires a peak out...
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sg-ntu-dr.10356-35142023-07-04T17:34:06Z A 2.45GHz CMOS PA+T/R switch for wireless communication Hu, Changhui Do, Manh Anh School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Wireless communication systems This thesis describes the design of an RF CMOS Power Amplifier (PA) combined with a T/R switch in a conventional CMOS process. The Power Amplifier is designed for all applications in the ISM (Industry Science and Medical) band, which has a transmit frequency of 2.4~2.4835 GHz and requires a peak output power of 100mW (EIRP). A Class A CMOS PA with T/R switch in a 0.18um thick gate standard CMOS process which can generate 100mW of output power into a 50ohms load is presented in this report. Packaging, PCB and testing issues are also described in this report. MASTER OF ENGINEERING (EEE) 2008-09-17T09:31:26Z 2008-09-17T09:31:26Z 2006 2006 Thesis Hu, C. (2006). A 2.45GHz CMOS PA+T/R switch for wireless communication. Master’s thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3514 10.32657/10356/3514 Nanyang Technological University 138 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Wireless communication systems Hu, Changhui A 2.45GHz CMOS PA+T/R switch for wireless communication |
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This thesis describes the design of an RF CMOS Power Amplifier (PA) combined with a T/R switch in a conventional CMOS process. The Power Amplifier is designed for all applications in the ISM (Industry Science and Medical) band, which has a transmit frequency of 2.4~2.4835 GHz and requires a peak output power of 100mW (EIRP). A Class A CMOS PA with T/R switch in a 0.18um thick gate standard CMOS process which can generate 100mW of output power into a 50ohms load is presented in this report. Packaging, PCB and testing issues are also described in this report. |
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Do, Manh Anh |
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Do, Manh Anh Hu, Changhui |
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Theses and Dissertations |
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Hu, Changhui |
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Hu, Changhui |
title |
A 2.45GHz CMOS PA+T/R switch for wireless communication |
title_short |
A 2.45GHz CMOS PA+T/R switch for wireless communication |
title_full |
A 2.45GHz CMOS PA+T/R switch for wireless communication |
title_fullStr |
A 2.45GHz CMOS PA+T/R switch for wireless communication |
title_full_unstemmed |
A 2.45GHz CMOS PA+T/R switch for wireless communication |
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2.45ghz cmos pa+t/r switch for wireless communication |
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2008 |
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https://hdl.handle.net/10356/3514 |
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1772826480530685952 |