PZT thin-films : structure and properties

• Main Author: Lim, Chee Yong.
• Other Authors: Chen Lang
• Format: Final Year Project
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/35664
• Institution: Nanyang Technological University

There is always this ongoing debate of using which deposition technique to acquire the best thin films possible. In this study, lead zirconium titanate, PZT, a ferroelectric material is deposited using both sol-gel deposition and pulsed laser deposition method and their electrical properties are investigated and compared. PZT is tested because of its large number of applications in various devices. Thus the purpose of this report is to distinguish the two different deposition methods so as to find a more efficient and effective way of getting to produce the thin films. After both depositions are done, different tests are carried out for example XRD diffraction, I-V, P-V and C-V characterization. The X-ray diffraction pattern shows single phase composition of PbZr0.52Ti0.4803 phase composition without any impurities. The dielectric measurement shows a diffused phase transition. The curie transition temperature of the films is found to be at 385ºC. The leakage current is also very little in both the samples. The maximum polarization observe in PLD samples and the cohesive fields are also less when comparing PLD samples and sol-gel samples. So from this research, it is found that using PLD technique is much more favorable than using sol-gel deposition method.