Modelling of nanoscale phenomenon : quantum dot nucleation
188 p.
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2010
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sg-ntu-dr.10356-361232023-03-11T17:08:50Z Modelling of nanoscale phenomenon : quantum dot nucleation Cai, Xinle Ng Teng Yong School of Mechanical and Aerospace Engineering DRNTU::Engineering::Nanotechnology 188 p. There has been a tremendous increase in interest on gallium nitride (GaN) since 1989 when it was shown by the Nichia group [1], the possible capabilities obtainable from GaN. However it was only recently that intense research efforts have been dedicated to developing high-quality GaN due to the recent breakthroughs in epitaxy techniques to grow GaN [2,3]. High quality GaN is difficult to grow due to its high susceptibility to form dislocations [4], need of extreme conditions for growth and the lack of latticematched substrates [5,6]. With recent available epitaxy techniques, some attention had been given to growing GaN quantum dots. Quantum dots (QDs) are nano-islands or structures that exhibit zero-dimension density-of-states and are ideal for use in various optical and opto-electronic applications [7]. However, due to their extreme small size, precise instrumentation for in situ monitoring of their growth process is not available. In addition, GaN QDs have in many ways displayed unique growth characteristics, which are different from other group III-V quantum dots systems such InAs/GaAs. Hence, it is proposed here to conduct an atomistic simulation to study the nucleation process of GaN QDs on aluminium nitride (A1N) substrate. MASTER OF ENGINEERING (MAE) 2010-04-23T02:29:21Z 2010-04-23T02:29:21Z 2006 2006 Thesis Cai, X. (2006). Modelling of nanoscale phenomenon : quantum dot nucleation. Master’s thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/36123 10.32657/10356/36123 application/pdf |
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DRNTU::Engineering::Nanotechnology Cai, Xinle Modelling of nanoscale phenomenon : quantum dot nucleation |
| description |
188 p. |
| author2 |
Ng Teng Yong |
| author_facet |
Ng Teng Yong Cai, Xinle |
| format |
Theses and Dissertations |
| author |
Cai, Xinle |
| author_sort |
Cai, Xinle |
| title |
Modelling of nanoscale phenomenon : quantum dot nucleation |
| title_short |
Modelling of nanoscale phenomenon : quantum dot nucleation |
| title_full |
Modelling of nanoscale phenomenon : quantum dot nucleation |
| title_fullStr |
Modelling of nanoscale phenomenon : quantum dot nucleation |
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Modelling of nanoscale phenomenon : quantum dot nucleation |
| title_sort |
modelling of nanoscale phenomenon : quantum dot nucleation |
| publishDate |
2010 |
| url |
https://hdl.handle.net/10356/36123 |
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1761781360404463616 |