Photovoltaic properties of ferroelectric ceramic thin films

• Main Author: Tan, Kee Sing.
• Other Authors: Yao Kui
• Format: Final Year Project
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering
• Online Access: http://hdl.handle.net/10356/36190
• Institution: Nanyang Technological University

The potential of using ferroelectric materials in applications such as sensors, transducers and micro-actuators has always been an area of intense research. In light of the increase in public awareness of the adverse effect of prolonged UV exposure, there is a need for the development of a low cost UV detector. Conventional semiconductor based UV detectors either requires expensive processing techniques or are sensitive to wavelengths in the visible region. Thus, an alternative method to realize UV detection is through the utilization of the photovoltaic property of ferroelectric thin film PLZT due to its corresponding bandgap around UV wavelengths. Conventionally a sandwiched configuration is often used, thus the opaque top electrode inevitably prevents a portion of light from reaching the active layer. Interdigital configuration on PLZT thin films is thus employed due to its potential in generating large voltage signal and minimal energy loss from direct exposure to sunlight. In this work, various aspects such as the material constant, photovoltaic response and its conversion efficiency are investigated. In addition, the effects of varying temperature and humidity on the performance of the device are studied. A UV detector prototype developed by IMRE was tested under both laboratory and outdoor conditions. This report successfully demonstrated that UV sensing capability can be realized through the photovoltaic response of ferroelectric ceramic thin films. Looking forward, the results will contribute to development and optimization of the UV detector for future research.