Microwave noise characterization and modeling of InP heterojunction bipolar transistor
The main objective of this thesis is to create an accurate, reliable yet simple noise model that could model the noise features of InP HBTs.
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2008
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Online Access: | http://hdl.handle.net/10356/3807 |
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sg-ntu-dr.10356-38072023-07-04T15:15:09Z Microwave noise characterization and modeling of InP heterojunction bipolar transistor Xiong, Yong Zhong. Fu, Jeffrey Shiang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio The main objective of this thesis is to create an accurate, reliable yet simple noise model that could model the noise features of InP HBTs. Doctor of Philosophy (EEE) 2008-09-17T09:37:56Z 2008-09-17T09:37:56Z 2003 2003 Thesis http://hdl.handle.net/10356/3807 Nanyang Technological University application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio Xiong, Yong Zhong. Microwave noise characterization and modeling of InP heterojunction bipolar transistor |
description |
The main objective of this thesis is to create an accurate, reliable yet simple noise model that could model the noise features of InP HBTs. |
author2 |
Fu, Jeffrey Shiang |
author_facet |
Fu, Jeffrey Shiang Xiong, Yong Zhong. |
format |
Theses and Dissertations |
author |
Xiong, Yong Zhong. |
author_sort |
Xiong, Yong Zhong. |
title |
Microwave noise characterization and modeling of InP heterojunction bipolar transistor |
title_short |
Microwave noise characterization and modeling of InP heterojunction bipolar transistor |
title_full |
Microwave noise characterization and modeling of InP heterojunction bipolar transistor |
title_fullStr |
Microwave noise characterization and modeling of InP heterojunction bipolar transistor |
title_full_unstemmed |
Microwave noise characterization and modeling of InP heterojunction bipolar transistor |
title_sort |
microwave noise characterization and modeling of inp heterojunction bipolar transistor |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/3807 |
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1772825267729858560 |