MOSFET noise modeling for wireless applications

• 主要作者: Chen, Xuezhong.
• 其他作者: Yeo, Kiat Seng
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Wireless communication systems
• 在線閱讀: http://hdl.handle.net/10356/3904

This thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The high frequency (HF) noise model is based on the equivalent circuit of the MOS device, but it takes into account both the gate resistance distribution and hot carrier effect.