Characterization of deep submicron MOSFET with ultra thin gate oxide
85 p.
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2010
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sg-ntu-dr.10356-391212023-07-04T15:30:41Z Characterization of deep submicron MOSFET with ultra thin gate oxide Sun, Quan. Wang Hong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors 85 p. In this dissertation, we mainly focus on characterization of gate oxide breakdown and understanding of the breakdown mechanisms of deep submicron MOSFETs with ultra thin gate oxide. Master of Science (Microelectronics) 2010-05-21T04:44:31Z 2010-05-21T04:44:31Z 2006 2006 Thesis http://hdl.handle.net/10356/39121 application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Sun, Quan. Characterization of deep submicron MOSFET with ultra thin gate oxide |
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85 p. |
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Wang Hong |
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Wang Hong Sun, Quan. |
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Theses and Dissertations |
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Sun, Quan. |
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Sun, Quan. |
title |
Characterization of deep submicron MOSFET with ultra thin gate oxide |
title_short |
Characterization of deep submicron MOSFET with ultra thin gate oxide |
title_full |
Characterization of deep submicron MOSFET with ultra thin gate oxide |
title_fullStr |
Characterization of deep submicron MOSFET with ultra thin gate oxide |
title_full_unstemmed |
Characterization of deep submicron MOSFET with ultra thin gate oxide |
title_sort |
characterization of deep submicron mosfet with ultra thin gate oxide |
publishDate |
2010 |
url |
http://hdl.handle.net/10356/39121 |
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1772825346012348416 |