Characterization of deep submicron MOSFET with ultra thin gate oxide

85 p.

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Bibliographic Details
Main Author: Sun, Quan.
Other Authors: Wang Hong
Format: Theses and Dissertations
Published: 2010
Subjects:
Online Access:http://hdl.handle.net/10356/39121
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-39121
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spelling sg-ntu-dr.10356-391212023-07-04T15:30:41Z Characterization of deep submicron MOSFET with ultra thin gate oxide Sun, Quan. Wang Hong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors 85 p. In this dissertation, we mainly focus on characterization of gate oxide breakdown and understanding of the breakdown mechanisms of deep submicron MOSFETs with ultra thin gate oxide. Master of Science (Microelectronics) 2010-05-21T04:44:31Z 2010-05-21T04:44:31Z 2006 2006 Thesis http://hdl.handle.net/10356/39121 application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Sun, Quan.
Characterization of deep submicron MOSFET with ultra thin gate oxide
description 85 p.
author2 Wang Hong
author_facet Wang Hong
Sun, Quan.
format Theses and Dissertations
author Sun, Quan.
author_sort Sun, Quan.
title Characterization of deep submicron MOSFET with ultra thin gate oxide
title_short Characterization of deep submicron MOSFET with ultra thin gate oxide
title_full Characterization of deep submicron MOSFET with ultra thin gate oxide
title_fullStr Characterization of deep submicron MOSFET with ultra thin gate oxide
title_full_unstemmed Characterization of deep submicron MOSFET with ultra thin gate oxide
title_sort characterization of deep submicron mosfet with ultra thin gate oxide
publishDate 2010
url http://hdl.handle.net/10356/39121
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