Analysis of Raman assisted stokes and anti-stokes emission in silicon waveguide

Silicon photonics technology is a rapidly evolving research area today with promising impact in realizing low cost, high speed optoelectronic components for data and telecommunication applications. Recent development of silicon photonics has been hugely hindered by the lack of active components such...

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Main Author: Yu, Ya Xin.
Other Authors: Shum Ping
Format: Final Year Project
Language:English
Published: 2010
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Online Access:http://hdl.handle.net/10356/39470
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-394702023-07-07T15:40:51Z Analysis of Raman assisted stokes and anti-stokes emission in silicon waveguide Yu, Ya Xin. Shum Ping School of Electrical and Electronic Engineering Network Technology Research Centre DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio Silicon photonics technology is a rapidly evolving research area today with promising impact in realizing low cost, high speed optoelectronic components for data and telecommunication applications. Recent development of silicon photonics has been hugely hindered by the lack of active components such as amplifier and wavelength converter. Raman processes such as stimulated Raman scattering (SRS) and coherent anti-Stokes Raman scattering (CARS) are proposed as the attractive solution to that. In this report, our main focus is on Raman assisted Stokes and anti-Stokes emission in silicon waveguide. In order to find out the optimal Stokes-to-anti-Stokes conversion efficiency for silicon waveguide, we proposed three types of device models, namely single wavelength converter, mono-directionally pumped combined device of amplifier and wavelength converter and bi-directionally pumped combined device of amplifier and wavelength converter. And according to our amplitude propagation model (APM) applied in this research work, there are seven main parameters may affect the output: (1) phase mismatch factor, (2) pump power, (3) Stokes probe power, (4) cavity length, (5) absorption coefficient, (6) two photon absorption (TPA) coefficient, and (7) effective free carrier recombination time. Intensive numerical simulations were conducted on the proposed models. Analysis of the relationships between Stokes-to-anti-Stokes conversion efficiency/anti-Stokes-to-Stokes output ratio and the seven influencing parameters for wavelength converter model were also discussed in detail. In the end, we conclude that a mono-directionally pumped combined device of amplifier and wavelength converter can give the best Stokes-to-anti-Stokes conversion efficiency compared with the other models and the optimal configurations for single wavelength converter model and mono-directionally pumped combined device model are also obtained. Bachelor of Engineering 2010-05-27T03:25:42Z 2010-05-27T03:25:42Z 2010 2010 Final Year Project (FYP) http://hdl.handle.net/10356/39470 en Nanyang Technological University 110 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
Yu, Ya Xin.
Analysis of Raman assisted stokes and anti-stokes emission in silicon waveguide
description Silicon photonics technology is a rapidly evolving research area today with promising impact in realizing low cost, high speed optoelectronic components for data and telecommunication applications. Recent development of silicon photonics has been hugely hindered by the lack of active components such as amplifier and wavelength converter. Raman processes such as stimulated Raman scattering (SRS) and coherent anti-Stokes Raman scattering (CARS) are proposed as the attractive solution to that. In this report, our main focus is on Raman assisted Stokes and anti-Stokes emission in silicon waveguide. In order to find out the optimal Stokes-to-anti-Stokes conversion efficiency for silicon waveguide, we proposed three types of device models, namely single wavelength converter, mono-directionally pumped combined device of amplifier and wavelength converter and bi-directionally pumped combined device of amplifier and wavelength converter. And according to our amplitude propagation model (APM) applied in this research work, there are seven main parameters may affect the output: (1) phase mismatch factor, (2) pump power, (3) Stokes probe power, (4) cavity length, (5) absorption coefficient, (6) two photon absorption (TPA) coefficient, and (7) effective free carrier recombination time. Intensive numerical simulations were conducted on the proposed models. Analysis of the relationships between Stokes-to-anti-Stokes conversion efficiency/anti-Stokes-to-Stokes output ratio and the seven influencing parameters for wavelength converter model were also discussed in detail. In the end, we conclude that a mono-directionally pumped combined device of amplifier and wavelength converter can give the best Stokes-to-anti-Stokes conversion efficiency compared with the other models and the optimal configurations for single wavelength converter model and mono-directionally pumped combined device model are also obtained.
author2 Shum Ping
author_facet Shum Ping
Yu, Ya Xin.
format Final Year Project
author Yu, Ya Xin.
author_sort Yu, Ya Xin.
title Analysis of Raman assisted stokes and anti-stokes emission in silicon waveguide
title_short Analysis of Raman assisted stokes and anti-stokes emission in silicon waveguide
title_full Analysis of Raman assisted stokes and anti-stokes emission in silicon waveguide
title_fullStr Analysis of Raman assisted stokes and anti-stokes emission in silicon waveguide
title_full_unstemmed Analysis of Raman assisted stokes and anti-stokes emission in silicon waveguide
title_sort analysis of raman assisted stokes and anti-stokes emission in silicon waveguide
publishDate 2010
url http://hdl.handle.net/10356/39470
_version_ 1772827389042098176