Oxygen-vacancy-mediated ferromagnetism in Fe:In2O3 (IFO) and exchange bias effect in IFO/NiO system.

Diluted magnetic semiconductor (DMS) with high TC finds significant applications in Spintronics, where both electron charge and electron spin can be manipulated. Exchange bias (EB) effect plays a very important role in many magnetic devices (e.g. spin valve) by pinning or stabilizing a ferromagnetic...

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Bibliographic Details
Main Author: Li, Suchun.
Other Authors: Wang Lan
Format: Final Year Project
Language:English
Published: 2010
Subjects:
Online Access:http://hdl.handle.net/10356/39820
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Institution: Nanyang Technological University
Language: English
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