Characterization study of multifunctional thin films and electronic devices

In this Final Year Project, the ferroelectric material BaTiO3 which can be used in the application of Ferroelectric Random Access Memory (FeRAM) has been studied on its electric properties. The BaTiO3 layer is grown on SrTiO3 substrates using laser Molecular Beam Epitaxy (MBE). In the structure, th...

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Bibliographic Details
Main Author: Zhang, Chen
Other Authors: Zhu Weiguang
Format: Final Year Project
Language:English
Published: 2010
Subjects:
Online Access:http://hdl.handle.net/10356/40605
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Institution: Nanyang Technological University
Language: English
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Summary:In this Final Year Project, the ferroelectric material BaTiO3 which can be used in the application of Ferroelectric Random Access Memory (FeRAM) has been studied on its electric properties. The BaTiO3 layer is grown on SrTiO3 substrates using laser Molecular Beam Epitaxy (MBE). In the structure, the BaTiO3 is sandwiched by two layers of SrRuO3 which act as top and bottom electrodes. Photomasks are designed by using the CAD tool, L-Edit. Then through the photolithography, etching and deposition process, the prototype device could be fabricated. Therefore, electrical characterization like polarization, Hall Effect and resistivity measurements could be conducted.