MOCVD growth of III-V compounds for long wavelength optoelectronic devices

MOCVD growth of III-V compounds for long wavelength optoelectronic devices

Metal-Organic Chemical Vapour Deposition (MOCVD) growth of InP based III-V semiconductor materials for long-wavelength semiconductor lasers have been studied in detail. With tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V precursors and N2 as carrier gas, high quality InP base...

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Main Author: Zhu, Jingyi
Other Authors: Tang Xiaohong
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:https://hdl.handle.net/10356/4075
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-40752023-07-04T17:37:32Z MOCVD growth of III-V compounds for long wavelength optoelectronic devices Zhu, Jingyi Tang Xiaohong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Metal-Organic Chemical Vapour Deposition (MOCVD) growth of InP based III-V semiconductor materials for long-wavelength semiconductor lasers have been studied in detail. With tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V precursors and N2 as carrier gas, high quality InP based III-V semiconductor alloys and quantum well (QW) structures have been grown by using MOCVD technology. MASTER OF ENGINEERING (EEE) 2008-09-17T09:43:51Z 2008-09-17T09:43:51Z 2005 2005 Thesis Zhu, J. (2005). MOCVD growth of III-V compounds for long wavelength optoelectronic devices. Master’s thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/4075 10.32657/10356/4075 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Zhu, Jingyi
MOCVD growth of III-V compounds for long wavelength optoelectronic devices
description Metal-Organic Chemical Vapour Deposition (MOCVD) growth of InP based III-V semiconductor materials for long-wavelength semiconductor lasers have been studied in detail. With tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) as group V precursors and N2 as carrier gas, high quality InP based III-V semiconductor alloys and quantum well (QW) structures have been grown by using MOCVD technology.
author2 Tang Xiaohong
author_facet Tang Xiaohong
Zhu, Jingyi
format Theses and Dissertations
author Zhu, Jingyi
author_sort Zhu, Jingyi
title MOCVD growth of III-V compounds for long wavelength optoelectronic devices
title_short MOCVD growth of III-V compounds for long wavelength optoelectronic devices
title_full MOCVD growth of III-V compounds for long wavelength optoelectronic devices
title_fullStr MOCVD growth of III-V compounds for long wavelength optoelectronic devices
title_full_unstemmed MOCVD growth of III-V compounds for long wavelength optoelectronic devices
title_sort mocvd growth of iii-v compounds for long wavelength optoelectronic devices
publishDate 2008
url https://hdl.handle.net/10356/4075
_version_ 1772827332559503360

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