Characterization of semiconductor SnO2 based heterojunction and its optical response properties
Pure SnO2 and MgySn1-yO2-x thin film on silicon and quartz have been fabricated using Sol-Gel deposition technique. PZT thin film on silicon have also been prepared and fabricated with the same method. High quality epitaxial SnO2 thin films have been fabricated using Laser Beam Molecular Epitaxy...
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Format: | Final Year Project |
Language: | English |
Published: |
2010
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Online Access: | http://hdl.handle.net/10356/40778 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | Pure SnO2 and MgySn1-yO2-x thin film on silicon and quartz have been fabricated
using Sol-Gel deposition technique. PZT thin film on silicon have also been prepared
and fabricated with the same method. High quality epitaxial SnO2 thin films have
been fabricated using Laser Beam Molecular Epitaxy (LMBE) on different substrates
such as Si(001), STO:Nb and STO(111). The characterization of Magnesium doping
(p-type dopant) on SnO2 thin film has been investigated in details. The Mg doping
level range will be of 10% to 25% to increase the band gap of the SnO2 thin film’s
band gap. Hence band gap engineering such as simulation of experimental results
using Material Studio, analysis of transmission and absorbance by UV/Vis
spectrophotometer and characterization by Ellipsometry have been carried out to
prove the significant behavior of MgySn1-yO2-x thin film according to the Mg doping
level. The absorbance coefficient will be calculated and extracted to plot a graph
against photon energy so as to execute extrapolation for the individual’s band gap
values. The X-Ray Diffraction (XRD) peak results are obtained and compared with
the Joint Committee on Powder Diffraction Standard data. Surface morphology study
by Atomic Force Microscopy (AFM) has been carried on the Mg-doped SnO2 thin
films to observe and compare between surface roughness and Mg doping level.
Lastly, electrical characterization such as I-V characteristic has been carried out on
SnO2/STO:Nb heterojunction. Turn on voltage and reverse saturation current would
be analyzed to prove existence of diode characteristic. |
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