Gay, B. P., & Yoon, S. F. (2008). Fabrication of InGaP high electron mobility transistors by electron beam technique.
استشهاد بنمط شيكاغوGay, Boon Ping., و Soon Fatt Yoon. Fabrication of InGaP High Electron Mobility Transistors By Electron Beam Technique. 2008.
MLA استشهادGay, Boon Ping., و Soon Fatt Yoon. Fabrication of InGaP High Electron Mobility Transistors By Electron Beam Technique. 2008.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.