Fabrication of InGaP high electron mobility transistors by electron beam technique
Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxG...
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| 格式: | Theses and Dissertations |
| 出版: |
2008
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| 在線閱讀: | http://hdl.handle.net/10356/4282 |
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| 機構: | Nanyang Technological University |