Fabrication of InGaP high electron mobility transistors by electron beam technique

Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxG...

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Main Author:	Gay, Boon Ping.
Other Authors:	Yoon, Soon Fatt
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	http://hdl.handle.net/10356/4282
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-42822023-07-04T16:41:31Z Fabrication of InGaP high electron mobility transistors by electron beam technique Gay, Boon Ping. Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Recently, there has been great interest in the development of the InxGa\|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxGai.xP has over AlyGai.yAs. InxGai_xP does not appear to exhibit problems with donor-related deep traps, which can cause instabilities in the threshold voltage and transconductance of the transistor. In addition, the InxGai_xP/GaAs heterointerface has been shown to have a low carrier recombination velocity, and can be selectively wet etched in HCl-based solutions. Therefore, this thesis presents the device fabrication and characterisation of the InxGai.xP/In0.2oGao.8oAs HEMT. Master of Engineering 2008-09-17T09:48:16Z 2008-09-17T09:48:16Z 1999 1999 Thesis http://hdl.handle.net/10356/4282 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Gay, Boon Ping. Fabrication of InGaP high electron mobility transistors by electron beam technique
description	Recently, there has been great interest in the development of the InxGa\|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxGai.xP has over AlyGai.yAs. InxGai_xP does not appear to exhibit problems with donor-related deep traps, which can cause instabilities in the threshold voltage and transconductance of the transistor. In addition, the InxGai_xP/GaAs heterointerface has been shown to have a low carrier recombination velocity, and can be selectively wet etched in HCl-based solutions. Therefore, this thesis presents the device fabrication and characterisation of the InxGai.xP/In0.2oGao.8oAs HEMT.
author2	Yoon, Soon Fatt
author_facet	Yoon, Soon Fatt Gay, Boon Ping.
format	Theses and Dissertations
author	Gay, Boon Ping.
author_sort	Gay, Boon Ping.
title	Fabrication of InGaP high electron mobility transistors by electron beam technique
title_short	Fabrication of InGaP high electron mobility transistors by electron beam technique
title_full	Fabrication of InGaP high electron mobility transistors by electron beam technique
title_fullStr	Fabrication of InGaP high electron mobility transistors by electron beam technique
title_full_unstemmed	Fabrication of InGaP high electron mobility transistors by electron beam technique
title_sort	fabrication of ingap high electron mobility transistors by electron beam technique
publishDate	2008
url	http://hdl.handle.net/10356/4282
_version_	1772828519034781696

Fabrication of InGaP high electron mobility transistors by electron beam technique

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