Fabrication of InGaP high electron mobility transistors by electron beam technique
Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxG...
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sg-ntu-dr.10356-42822023-07-04T16:41:31Z Fabrication of InGaP high electron mobility transistors by electron beam technique Gay, Boon Ping. Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxGai.xP has over AlyGai.yAs. InxGai_xP does not appear to exhibit problems with donor-related deep traps, which can cause instabilities in the threshold voltage and transconductance of the transistor. In addition, the InxGai_xP/GaAs heterointerface has been shown to have a low carrier recombination velocity, and can be selectively wet etched in HCl-based solutions. Therefore, this thesis presents the device fabrication and characterisation of the InxGai.xP/In0.2oGao.8oAs HEMT. Master of Engineering 2008-09-17T09:48:16Z 2008-09-17T09:48:16Z 1999 1999 Thesis http://hdl.handle.net/10356/4282 Nanyang Technological University application/pdf |
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Nanyang Technological University |
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Singapore Singapore |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Gay, Boon Ping. Fabrication of InGaP high electron mobility transistors by electron beam technique |
| description |
Recently, there has been great interest in the development of the InxGa|.xP material
system as an alternative to AlyGai_yAs, for applications, such as in high electron
mobility transistors, heterojunction bipolar transistors and diode lasers. This is
attributed to the several advantages that InxGai.xP has over AlyGai.yAs. InxGai_xP does
not appear to exhibit problems with donor-related deep traps, which can cause
instabilities in the threshold voltage and transconductance of the transistor. In
addition, the InxGai_xP/GaAs heterointerface has been shown to have a low carrier
recombination velocity, and can be selectively wet etched in HCl-based solutions.
Therefore, this thesis presents the device fabrication and characterisation of the
InxGai.xP/In0.2oGao.8oAs HEMT. |
| author2 |
Yoon, Soon Fatt |
| author_facet |
Yoon, Soon Fatt Gay, Boon Ping. |
| format |
Theses and Dissertations |
| author |
Gay, Boon Ping. |
| author_sort |
Gay, Boon Ping. |
| title |
Fabrication of InGaP high electron mobility transistors by electron beam technique |
| title_short |
Fabrication of InGaP high electron mobility transistors by electron beam technique |
| title_full |
Fabrication of InGaP high electron mobility transistors by electron beam technique |
| title_fullStr |
Fabrication of InGaP high electron mobility transistors by electron beam technique |
| title_full_unstemmed |
Fabrication of InGaP high electron mobility transistors by electron beam technique |
| title_sort |
fabrication of ingap high electron mobility transistors by electron beam technique |
| publishDate |
2008 |
| url |
http://hdl.handle.net/10356/4282 |
| _version_ |
1772828519034781696 |