Fabrication of InGaP high electron mobility transistors by electron beam technique

• المؤلف الرئيسي: Gay, Boon Ping.
• مؤلفون آخرون: Yoon, Soon Fatt
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/4282

Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxG...