Fabrication of InGaP high electron mobility transistors by electron beam technique

• Main Author: Gay, Boon Ping.
• Other Authors: Yoon, Soon Fatt
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/4282
• Institution: Nanyang Technological University

Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxG...