APA引文

Gay, B. P., & Yoon, S. F. (2008). Fabrication of InGaP high electron mobility transistors by electron beam technique.

Chicago Style Citation

Gay, Boon Ping., and Soon Fatt Yoon. Fabrication of InGaP High Electron Mobility Transistors By Electron Beam Technique. 2008.

MLA引文

Gay, Boon Ping., and Soon Fatt Yoon. Fabrication of InGaP High Electron Mobility Transistors By Electron Beam Technique. 2008.

警告：這些引文格式不一定是100％准確.