65 nm BEOL electro-copper plating gap fill capability study

• Main Author: Deng, Fangxin
• Other Authors: Zhang Dao Hua
• Format: Theses and Dissertations
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
• Online Access: https://hdl.handle.net/10356/43218
• Institution: Nanyang Technological University

The objectives of this project include reducing Cu void defects, prolonging metal electromigration (EM) lifetime and improving wafer yield. As a result of the project, the Ta/TaN/Ta tri-layer barrier in the advanced direct contact via (ADCV) structures, via bottom removal and 3-step Cu seed for dual...