Design of high-power semiconductor laser arrays
The following dissertation would give an account of the design of an optimized AIGaAdGaAs material based high power diode laser array structure with the lasing wavelength of 808nm.
Saved in:
主要作者: | |
---|---|
其他作者: | |
格式: | Theses and Dissertations |
出版: |
2008
|
主題: | |
在線閱讀: | http://hdl.handle.net/10356/4366 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
機構: | Nanyang Technological University |