CMOS curvature-corrected voltage reference

A low voltage curvature-correction band-gap voltage reference is designed and fabricated using IME's 0.8um standard CMOS process. A first-order and a curvature voltage source are used to compensate the base emitter voltage, which has a negative temperature coefficient. It provides an accurate 1...

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Bibliographic Details
Main Author:	Hon, Yau Kin.
Other Authors:	Ng, Lian Soon
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Power electronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	http://hdl.handle.net/10356/4374
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-4374
record_format	dspace
spelling	sg-ntu-dr.10356-43742023-07-04T15:18:40Z CMOS curvature-corrected voltage reference Hon, Yau Kin. Ng, Lian Soon School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Power electronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors A low voltage curvature-correction band-gap voltage reference is designed and fabricated using IME's 0.8um standard CMOS process. A first-order and a curvature voltage source are used to compensate the base emitter voltage, which has a negative temperature coefficient. It provides an accurate 1.25 V output voltage over a power supply range from 2.4 V to 3.6V. Such a design is suitable for two-battery portable applications. The whole design is divided into several functional blocks and each block is layed out separately in a standard height manner so that each functional block could be reused easily in other designs. Most of the functional blocks have been characterized, and closely matched the simulation results. Master of Science (Consumer Electronics) 2008-09-17T09:50:17Z 2008-09-17T09:50:17Z 2000 2000 Thesis http://hdl.handle.net/10356/4374 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Power electronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Power electronics DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Hon, Yau Kin. CMOS curvature-corrected voltage reference
description	A low voltage curvature-correction band-gap voltage reference is designed and fabricated using IME's 0.8um standard CMOS process. A first-order and a curvature voltage source are used to compensate the base emitter voltage, which has a negative temperature coefficient. It provides an accurate 1.25 V output voltage over a power supply range from 2.4 V to 3.6V. Such a design is suitable for two-battery portable applications. The whole design is divided into several functional blocks and each block is layed out separately in a standard height manner so that each functional block could be reused easily in other designs. Most of the functional blocks have been characterized, and closely matched the simulation results.
author2	Ng, Lian Soon
author_facet	Ng, Lian Soon Hon, Yau Kin.
format	Theses and Dissertations
author	Hon, Yau Kin.
author_sort	Hon, Yau Kin.
title	CMOS curvature-corrected voltage reference
title_short	CMOS curvature-corrected voltage reference
title_full	CMOS curvature-corrected voltage reference
title_fullStr	CMOS curvature-corrected voltage reference
title_full_unstemmed	CMOS curvature-corrected voltage reference
title_sort	cmos curvature-corrected voltage reference
publishDate	2008
url	http://hdl.handle.net/10356/4374
_version_	1772828300342722560

CMOS curvature-corrected voltage reference

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