Spin transport In graphene ferromagnet-semiconductor devices and magneto-transport properties of four-layer graphene structure
Most of the modern day Field-Effect Transistors (FET) in microelectronics are constructed in order to operate on the transport of charges. Devices with tunneling magnetoresistance and giant magnetoresistance effects in ferromagnetic-layer structures have already exploited in the industry. They carry...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2011
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| Online Access: | http://hdl.handle.net/10356/45685 |
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| Institution: | Nanyang Technological University |
| Language: | English |