Design and analysis of low-power, variation-tolerant match-line sense amplifiers for large capacity content addressable memories (CAMs) in 65 nm CMOS process

• 主要作者: Tan, Xiao Liang.
• 其他作者: Yeo Kiat Seng
• 格式: Final Year Project
• 語言: English
• 出版: 2011
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
• 在線閱讀: http://hdl.handle.net/10356/45740
• 機構: Nanyang Technological University

Content Addressable Memory (CAM) is extensively used in many high speed data searching applications due to its high speed and single clock cycle throughput characteristics. However, this comes at a cost of high power consumption mainly due to the match line sense amplifier. Therefore, a lot of works...