Investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy

52 p.

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Bibliographic Details
Main Author:	Yoon, Soon-Fatt.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Research Report
Published:	2011
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	http://hdl.handle.net/10356/46613
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-466132023-03-04T03:25:16Z Investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy Yoon, Soon-Fatt. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors 52 p. Subsequent to fabrication, double-heterostructure laser diodes with planar GalnAsP active regions are subjected to an annealing or burn-in process during which they are operated at a constant 5 mW light-output power at a temperature of 50°C. In general, small increases of drive current are found in the first 1000 to 2000 h of operation after which the lasers settle down. In the present diodes, drive current increases of typically 6% occurred. There is little change in threshold current and the changes seen are mainly due to a decrease in slope efficiency. In all cases the changes decrease gradually after about 2000 h and revert to the behavior expected of long lived and reliable quaternary lasers. RP 24/91 2011-12-21T03:07:14Z 2011-12-21T03:07:14Z 1996 1996 Research Report http://hdl.handle.net/10356/46613 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Yoon, Soon-Fatt. Investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy
description	52 p.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Yoon, Soon-Fatt.
format	Research Report
author	Yoon, Soon-Fatt.
author_sort	Yoon, Soon-Fatt.
title	Investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy
title_short	Investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy
title_full	Investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy
title_fullStr	Investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy
title_full_unstemmed	Investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy
title_sort	investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy
publishDate	2011
url	http://hdl.handle.net/10356/46613
_version_	1759858321801609216

Investigation of the spectral and electrical accelerated degradation characteristics of semiconductor injection lasers grown by molecular beam epitaxy

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