Lutetium oxide gate dielectric fabricated by pulsed laser deposition.

152 p.

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Main Author: Peter Darmawan.
Other Authors: Lee Pooi See
Format: Theses and Dissertations
Published: 2011
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Online Access:https://hdl.handle.net/10356/47288
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-472882023-03-04T16:40:51Z Lutetium oxide gate dielectric fabricated by pulsed laser deposition. Peter Darmawan. Lee Pooi See School of Materials Science & Engineering DRNTU::Engineering 152 p. The aim of this project is to investigate the suitability of rare-earth oxide as gate dielectric, in particular LU2O3. There are three main chapters, in which the properties of LU2O3 film, the effect of post-deposition treatments on LU2O3 film as well as the properties of Lu203 on the next generation of semiconductor substrate are discussed in detail. DOCTOR OF PHILOSOPHY (MSE) 2011-12-27T06:54:02Z 2011-12-27T06:54:02Z 2010 2010 Thesis Peter Darmawan. (2010). Lutetium oxide gate dielectric fabricated by pulsed laser deposition. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/47288 10.32657/10356/47288 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering
spellingShingle DRNTU::Engineering
Peter Darmawan.
Lutetium oxide gate dielectric fabricated by pulsed laser deposition.
description 152 p.
author2 Lee Pooi See
author_facet Lee Pooi See
Peter Darmawan.
format Theses and Dissertations
author Peter Darmawan.
author_sort Peter Darmawan.
title Lutetium oxide gate dielectric fabricated by pulsed laser deposition.
title_short Lutetium oxide gate dielectric fabricated by pulsed laser deposition.
title_full Lutetium oxide gate dielectric fabricated by pulsed laser deposition.
title_fullStr Lutetium oxide gate dielectric fabricated by pulsed laser deposition.
title_full_unstemmed Lutetium oxide gate dielectric fabricated by pulsed laser deposition.
title_sort lutetium oxide gate dielectric fabricated by pulsed laser deposition.
publishDate 2011
url https://hdl.handle.net/10356/47288
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