Lutetium oxide gate dielectric fabricated by pulsed laser deposition.
152 p.
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2011
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sg-ntu-dr.10356-472882023-03-04T16:40:51Z Lutetium oxide gate dielectric fabricated by pulsed laser deposition. Peter Darmawan. Lee Pooi See School of Materials Science & Engineering DRNTU::Engineering 152 p. The aim of this project is to investigate the suitability of rare-earth oxide as gate dielectric, in particular LU2O3. There are three main chapters, in which the properties of LU2O3 film, the effect of post-deposition treatments on LU2O3 film as well as the properties of Lu203 on the next generation of semiconductor substrate are discussed in detail. DOCTOR OF PHILOSOPHY (MSE) 2011-12-27T06:54:02Z 2011-12-27T06:54:02Z 2010 2010 Thesis Peter Darmawan. (2010). Lutetium oxide gate dielectric fabricated by pulsed laser deposition. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/47288 10.32657/10356/47288 Nanyang Technological University application/pdf |
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DRNTU::Engineering Peter Darmawan. Lutetium oxide gate dielectric fabricated by pulsed laser deposition. |
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152 p. |
author2 |
Lee Pooi See |
author_facet |
Lee Pooi See Peter Darmawan. |
format |
Theses and Dissertations |
author |
Peter Darmawan. |
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Peter Darmawan. |
title |
Lutetium oxide gate dielectric fabricated by pulsed laser deposition. |
title_short |
Lutetium oxide gate dielectric fabricated by pulsed laser deposition. |
title_full |
Lutetium oxide gate dielectric fabricated by pulsed laser deposition. |
title_fullStr |
Lutetium oxide gate dielectric fabricated by pulsed laser deposition. |
title_full_unstemmed |
Lutetium oxide gate dielectric fabricated by pulsed laser deposition. |
title_sort |
lutetium oxide gate dielectric fabricated by pulsed laser deposition. |
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2011 |
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https://hdl.handle.net/10356/47288 |
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1759853632403013632 |