Cobalt-doped zinc oxide dilute magnetic semiconductors for spintronics devices

149 p.

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Bibliographic Details
Main Author:	Liu, Qing
Other Authors:	Gan Chee Lip
Format:	Theses and Dissertations
Published:	2011
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Online Access:	https://hdl.handle.net/10356/47298
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-472982023-03-04T16:38:42Z Cobalt-doped zinc oxide dilute magnetic semiconductors for spintronics devices Liu, Qing Gan Chee Lip School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials 149 p. In recent years, Dilute Magnetic Semiconductors (DMS) with ZnO as host materials have attracted enormous attention. Structural and magnetic properties of Zno.95Coo.05O thin films grown on rc-type (001) silicon by pulsed laser deposition method were characterized. Contributions by metallic cobalt nanoclusters, oxygen partial pressure and substrate deposition temperature to ferromagnetism were investigated. Experiments have shown that the observed ferromagnetism in Co-doped ZnO thin films was not due to the metallic cobalt nanoclusters. Bound magnetic polaron (BMP) model and Ruderman- Kittel-Kasuya-Yosida (RICKY) interaction are the two mechanisms that most likely explain the origins of Zno.95Coo.05O ferromagnetism. The amount of oxygen vacancies, which could be adjusted by varying the oxygen partial pressure during DMS thin film deposition, affects the polaron density in the BMP model that leads to formation of long range order of magnetic cations. It was also demonstrated that there is an optimal substrate temperature range for maximum saturation magnetization as a balance between the carrier concentration and carrier mean free path have to be achieved. Metal-insulatorsemiconductor structures were fabricated by pulsed laser deposition method to investigate the injection of carriers by an external electric field into the DMS layer. Under different applied electric field, the carrier concentration in the Co-doped ZnO layer was adjusted. This led to a change in the ferromagnetic properties of the DMS layer that could be explained by the RKKY mechanism. DOCTOR OF PHILOSOPHY (MSE) 2011-12-27T06:55:46Z 2011-12-27T06:55:46Z 2009 2009 Thesis Liu, Q. (2009). Cobalt-doped zinc oxide dilute magnetic semiconductors for spintronic devices. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/47298 10.32657/10356/47298 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials Liu, Qing Cobalt-doped zinc oxide dilute magnetic semiconductors for spintronics devices
description	149 p.
author2	Gan Chee Lip
author_facet	Gan Chee Lip Liu, Qing
format	Theses and Dissertations
author	Liu, Qing
author_sort	Liu, Qing
title	Cobalt-doped zinc oxide dilute magnetic semiconductors for spintronics devices
title_short	Cobalt-doped zinc oxide dilute magnetic semiconductors for spintronics devices
title_full	Cobalt-doped zinc oxide dilute magnetic semiconductors for spintronics devices
title_fullStr	Cobalt-doped zinc oxide dilute magnetic semiconductors for spintronics devices
title_full_unstemmed	Cobalt-doped zinc oxide dilute magnetic semiconductors for spintronics devices
title_sort	cobalt-doped zinc oxide dilute magnetic semiconductors for spintronics devices
publishDate	2011
url	https://hdl.handle.net/10356/47298
_version_	1759854873046679552

Cobalt-doped zinc oxide dilute magnetic semiconductors for spintronics devices

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