Study of carbon nanotube field effect transistor using electrostatic force microscopy

• المؤلف الرئيسي: Ong, Hock Guan
• مؤلفون آخرون: Han Guchang
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials::Nanostructured materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/48023

As the silicon based metal-oxide-semiconductor field effect transistors quickly reaching the proposed 8 nm limit by 2022, it is necessary to search for solutions that can go beyond the 8 nm limit. One method is to substitute silicon with nanostrucutured materials. Carbon nanotube is a potential...